Datasheet SI4431BDY-T1-E3 - Vishay MOSFET, N, 8-SOIC — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, N, 8-SOIC

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Docket:
Si4431DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) 0.040 @ VGS = ­10 V ­30 30 0.070 @ VGS = ­4.5 V ID (A) "5.8 "4.5

Specifications:

• Continuous Drain Current Id: 5.8 A
• Current Id Max: 5.8 A
• Drain Source Voltage Vds: -30 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 40 MOhm
• Package / Case: 8-SOIC
• Power Dissipation: 2.5 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -3 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Andere Namen:

SI4431BDYT1E3, SI4431BDY T1 E3