Datasheet SI3447CDV-T1-E3 - Vishay MOSFET, P, TSOP-6 — Datenblatt
Part Number: SI3447CDV-T1-E3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, P, TSOP-6
Docket:
Si3447CDV
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.036 at VGS = - 4.5 V - 12 0.050 at VGS = - 2.5 V 0.068 at VGS = - 1.8 V ID (A)a - 7.8 - 6.6 - 5.6 12 nC Qg (Typ.)
Specifications:
- Continuous Drain Current Id: 7.8 A
- Current Id Max: -7.8 A
- Drain Source Voltage Vds: -12 V
- Junction Temperature Tj Max: 150°C
- Mounting Type: SMD
- Number of Pins: 6
- On Resistance Rds(on): 36 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TSOP
- Power Dissipation: 3 W
- Rds(on) Test Voltage Vgs: 8 V
- Rise Time: 40 ns
- SVHC: No SVHC (20-Jun-2011)
- Threshold Voltage Vgs Typ: -1 V
- Transistor Case Style: TSOP
- Transistor Polarity: P Channel
- Voltage Vds Typ: 12 V
- Voltage Vgs Max: -1 V
- Voltage Vgs Rds on Measurement: 4.5 V
- Voltage Vgs th Max: 1 V
- Voltage Vgs th Min: 0.4 V
RoHS: Yes
Andere Namen:
SI3447CDVT1E3, SI3447CDV T1 E3