Datasheet SI3445DV-T1-E3 - Vishay MOSFET TRANSISTOR — Datenblatt

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Manufacturer: Vishay

Description: MOSFET TRANSISTOR

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Docket:
Si3445DV
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8 RDS(on) () 0.042 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V 0.080 at VGS = - 1.8 V ID (A) ± 5.6 ± 4.7 ± 2.9

Specifications:

• Continuous Drain Current Id: 5.6 A
• Current Id Max: 5.6 A
• Drain Source Voltage Vds: -8 V
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 42 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: 6-TSOP
• Power Dissipation: 2 W
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -1 V
• Transistor Case Style: TSOP
• Transistor Polarity: P Channel
• Voltage Vds Typ: -8 V
• Voltage Vgs Max: -1 V
• Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes

Andere Namen:

SI3445DVT1E3, SI3445DV T1 E3