Datasheet SI1016X-T1-E3 - Vishay MOSFET, DUAL, NP, SOT-563 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, NP, SOT-563

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Docket:
Si1016X
Vishay Siliconix
Complementary N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.70 at VGS = 4.5 V N-Channel 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V 1.2 at VGS = - 4.5 V P-Channel - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) 600 500 350 - 400 - 300 - 150

Specifications:

• Continuous Drain Current Id: 600 mA
• Current Id Max: 600 mA
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 700 MOhm
• Package / Case: SOT-563
• Power Dissipation: 250 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 800 mV
• Transistor Case Style: SOT-563
• Transistor Polarity: N and P Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Andere Namen:

SI1016XT1E3, SI1016X T1 E3