Datasheet TSM1N60CP - Taiwan Semiconductor MOSFET, N, 600 V, D-PAK — Datenblatt

Taiwan Semiconductor TSM1N60CP

Part Number: TSM1N60CP

Detaillierte Beschreibung

Manufacturer: Taiwan Semiconductor

Description: MOSFET, N, 600 V, D-PAK

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Docket:
TSM1N60
N-Channel Power Enhancement Mode MOSFET
Pin assignment: 1.

Gate 2. Drain 3. Source
VDS = 600V ID = 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8
General Description

Specifications:

  • Alternate Case Style: TO-252
  • Application Code: GPSW
  • Continuous Drain Current Id: 1 A
  • Current Id Max: 1 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 600 V
  • External Depth: 10.5 mm
  • External Length / Height: 2.55 mm
  • External Width: 6.8 mm
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 8 Ohm
  • On State Resistance: 8 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: DPAK
  • Power Dissipation Pd: 50 W
  • Pulse Current Idm: 9 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Typ: 21 ns
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: D-PAK
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4 V
  • Voltage Vgs th Min: 2 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 244 08 D PAK
  • Fischer Elektronik - FK 244 13 D PAK