Datasheet SIS412DN-T1-GE3 - Vishay MOSFET, N-CH, 30 V, 12 A, POWERPAK8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N-CH, 30 V, 12 A, POWERPAK8

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Docket:
New Product
SiS412DN
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 12 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On State Resistance: 20 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 15.6 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PowerPAK 1212
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SIS412DNT1GE3, SIS412DN T1 GE3