Datasheet SIR410DP-T1-GE3 - Vishay MOSFET, N-CH, 20 V, 35 A, POWERPAK8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N-CH, 20 V, 35 A, POWERPAK8

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Docket:
SiR410DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.0048 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A)a 35 12.7 nC 35 Qg (Typ.)

Specifications:

• Current Id Max: 35 A
• Drain Source Voltage Vds: 20 V
• Number of Pins: 8
• On State Resistance: 4 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 36 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SIR410DPT1GE3, SIR410DP T1 GE3