Datasheet SIHB22N60S-E3 - Vishay MOSFET, N CH, 600 V, 22 A, TO263 — Datenblatt
Part Number: SIHB22N60S-E3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, N CH, 600 V, 22 A, TO263
Docket:
SiHB22N60S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS at TJ max.
(V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 98 17 25 Single
Specifications:
- Current Id Max: 22 A
- Drain Source Voltage Vds: 600 V
- Number of Pins: 3
- On State Resistance: 160 MOhm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 250 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Andere Namen:
SIHB22N60SE3, SIHB22N60S E3