Datasheet SI7190DP-T1-GE3 - Vishay MOSFET, N CH, 250 V, 18.4 A, PPAK SO8 — Datenblatt

Vishay SI7190DP-T1-GE3

Part Number: SI7190DP-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, 250 V, 18.4 A, PPAK SO8

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Docket:
New Product
Si7190DP
Vishay Siliconix
N-Channel 250-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Current Id Max: 18.4 A
  • Drain Source Voltage Vds: 250 V
  • Number of Pins: 8
  • On State Resistance: 98 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 96 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SI7190DPT1GE3, SI7190DP T1 GE3