Datasheet SI4427BDY-T1-GE3 - Vishay MOSFET, P, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, SO-8

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Docket:
Si4427BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.0105 at VGS = - 10 V 0.0125 at VGS = - 4.5 V 0.0195 at VGS = - 2.5 V ID (A) - 12.6 - 11.5 - 9.2

Simulation Model

Specifications:

• Continuous Drain Current Id: 9.7 A
• Current Id Max: -9.7 A
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On State Resistance @ Vgs = 2.5V: 19.5 MOhm
• On State Resistance @ Vgs = 4.5V: 12.5 MOhm
• On State Resistance: 10.5 MOhm
• On State resistance @ Vgs = 10V: 10.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• P Channel Gate Charge: 47.2nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.5 W
• Pulse Current Idm: 50 A
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -1.4 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -12 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5

Andere Namen:

SI4427BDYT1GE3, SI4427BDY T1 GE3