Datasheet PD57006 - STMicroelectronics MOSFET, N, RF, 6 W, 960 MHz — Datenblatt

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Manufacturer: STMicroelectronics

Description: MOSFET, N, RF, 6 W, 960 MHz

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Docket:
PD57006 PD57006S
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
ADVANCE DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
· EXCELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 6 W with 15 dB gain @ 945 MHz / 28V · NEW RF PLASTIC PACKAGE DESCRIPTION The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57006's superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Specifications:

• Continuous Drain Current Id: 1 A
• Drain Source Voltage Vds: 65 V
• Junction Temperature Tj Max: 165°C
• Mounting Type: SMD
• Number of Pins: 10
• Output Power: 6 W
• Package / Case: PowerSO-10RF
• Power Dissipation Pd: 6 W
• Power Dissipation Ptot Max: 20 W
• Power Gain Gp Typ: 15 dB
• SVHC: No SVHC (15-Dec-2010)
• Supply Voltage: 28 V
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: PowerSO-10RF
• Transistor Polarity: N Channel
• Voltage Vds Typ: 65 V
• Voltage Vgs Max: 20 V

RoHS: Yes