Datasheet STQ1HNK60R-AP - STMicroelectronics MOSFET N CH 600 V 0.4 A TO92 — Datenblatt

STMicroelectronics STQ1HNK60R-AP

Part Number: STQ1HNK60R-AP

Detaillierte Beschreibung

Manufacturer: STMicroelectronics

Description: MOSFET N CH 600 V 0.4 A TO92

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Docket:
STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESHTM MOSFET
Table 1: General Features
TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60

Specifications:

  • Continuous Drain Current Id: 500 mA
  • Current Id Max: 400 mA
  • Drain Source Voltage Vds: 600 V
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • On State Resistance: 8 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-92
  • Power Dissipation Pd: 3 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-92
  • Transistor Polarity: N Channel
  • Transistor Type: Power MOSFET
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

STQ1HNK60RAP, STQ1HNK60R AP