Datasheet RSQ045N03TR - Rohm MOSFET, N, 30 V, 4.5 A — Datenblatt

Rohm RSQ045N03TR

Part Number: RSQ045N03TR

Detaillierte Beschreibung

Manufacturer: Rohm

Description: MOSFET, N, 30 V, 4.5 A

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Docket:
RSQ045N03
Transistors
4V Drive Nch MOS FET
RSQ045N03
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Simulation ModelSimulation Model

Specifications:

  • Capacitance Ciss Typ: 520 pF
  • Continuous Drain Current Id: 4.5 A
  • Drain Source Voltage Vds: 30 V
  • Fall Time tf: 14 ns
  • Mounting Type: SMD
  • On State Resistance @ Vgs = 4.5V: 51 MOhm
  • On State Resistance: 38 MOhm
  • On State resistance @ Vgs = 10V: 38 MOhm
  • Package / Case: TSMT6
  • Pin Configuration: D(1+2+5+6), G(3), S(4)
  • Power Dissipation Pd: 1.25 W
  • Pulse Current Idm: 18 A
  • Rise Time: 19 ns
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 2.5 V
  • Transistor Case Style: TSMT
  • Transistor Polarity: N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2.5 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes