Datasheet RSQ025P03TR - Rohm MOSFET, P, 30 V, 2.5 A — Datenblatt

Rohm RSQ025P03TR

Part Number: RSQ025P03TR

Detaillierte Beschreibung

Manufacturer: Rohm

Description: MOSFET, P, 30 V, 2.5 A

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Docket:
RSQ025P03
Transistor
4V Drive Pch MOS FET
RSQ025P03
Structure Silicon P-channel MOS FET External dimensions (Unit : mm)

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 2.5 A
  • Drain Source Voltage Vds: 30 V
  • Mounting Type: SMD
  • On State Resistance: 120 MOhm
  • Package / Case: TSMT6
  • Power Dissipation Pd: 1.25 W
  • Pulse Current Idm: 10 A
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: -2.5 V
  • Transistor Case Style: TSMT
  • Transistor Polarity: P Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: -30 V
  • Voltage Vgs Rds on Measurement: 4 V
  • Voltage Vgs th Max: -2.5 V
  • Voltage Vgs th Min: -1 V

RoHS: Yes