Datasheet QS5U13TR - Rohm MOSFET, N, VGS -2.5 V — Datenblatt

Rohm QS5U13TR

Part Number: QS5U13TR

Detaillierte Beschreibung

Manufacturer: Rohm

Description: MOSFET, N, VGS -2.5 V

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Docket:
QS5U13
Transistors
2.5V Drive Nch+SBD MOS FET
QS5U13
Structure Silicon N-channel MOSFET Schottky Barrier DIODE External dimensions (Unit : mm)

Specifications:

  • Capacitance Ciss Typ: 175 pF
  • Continuous Drain Current Id: 2 A
  • Current Id Max: 2 A
  • Drain Source Voltage Vds: 30 V
  • Fall Time tf: 8 ns
  • Mounting Type: SMD
  • On State Resistance: 154 MOhm
  • Package / Case: TSMT5
  • Pin Configuration: 1(A), 2(S), 3(G), 4(D)
  • Power Dissipation Pd: 700 mW
  • Pulse Current Idm: 8 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Rise Time: 10 ns
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: TSMT
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 12 V
  • Voltage Vgs Rds on Measurement: 2.5 V
  • Voltage Vgs th Max: 1.5 V
  • Voltage Vgs th Min: 500 mV

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A