Datasheet QS6U24TR - Rohm MOSFET, P, VGS -4 V — Datenblatt

Rohm QS6U24TR

Part Number: QS6U24TR

Detaillierte Beschreibung

Manufacturer: Rohm

Description: MOSFET, P, VGS -4 V

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Docket:
QS6U24
Transistor
4V Drive Pch+SBD MOS FET
QS6U24
Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions (Unit : mm)

Specifications:

  • Capacitance Ciss Typ: 90 pF
  • Continuous Drain Current Id: 1 A
  • Drain Source Voltage Vds: 30 V
  • Fall Time tf: 7 ns
  • Mounting Type: SMD
  • On State Resistance: 800 MOhm
  • Package / Case: TSMT6
  • Pin Configuration: 1(G), 2(S), 3(A), 4(K), 5(D)
  • Power Dissipation Pd: 900 mW
  • Pulse Current Idm: 2 A
  • Rise Time: 7 ns
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: -2.5 V
  • Transistor Case Style: TSMT
  • Transistor Polarity: P Channel
  • Transistor Type: Protected MOSFET
  • Voltage Vds Typ: -30 V
  • Voltage Vgs Rds on Measurement: 4 V
  • Voltage Vgs th Max: -2.5 V
  • Voltage Vgs th Min: -1 V

RoHS: Yes