Datasheet MTB30P06VT4G - ON Semiconductor P CHANNEL MOSFET, -60 V, 30 A, D2-PAK — Datenblatt

Part Number: MTB30P06VT4G

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: P CHANNEL MOSFET, -60 V, 30 A, D2-PAK

Docket:
MTB30P06V
Preferred Device
Power MOSFET 30 Amps, 60 Volts
P-Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Specifications:

Continuous Drain Current Id: 30 A
Drain Source Voltage Vds: 60 V
On Resistance Rds(on): 80 MOhm
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 2.6 V
Transistor Polarity: P Channel

RoHS: Yes