Datasheet NID6002NT4G - ON Semiconductor SMART MOSFET, N, 65 V, 2.5 W, D-PAK — Datenblatt

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Manufacturer: ON Semiconductor

Description: SMART MOSFET, N, 65 V, 2.5 W, D-PAK

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Docket:
NID6002N
Preferred Device
Self-Protected FET with Temperature and Current Limit
65 V, 6.5 A, Single N-Channel, DPAK
http://onsemi.com

Specifications:

• Avalanche Single Pulse Energy Eas: 143mJ
• Continuous Drain Current Id: 6.5 A
• Current Id Max: 11 A
• Drain Source Voltage Vds: 65 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 210 MOhm
• Package / Case: DPAK
• Pin Configuration: 1(G), 2(D), 3(S)
• Power Dissipation: 2.5 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Shutdown Temperature: 200°C
• Threshold Voltage Vgs Typ: 1.85 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 65 V
• Voltage Vgs Max: 1.85 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.4 V
• Voltage Vgs th Min: 1 V

RoHS: Yes