Datasheet BSS123LT1G - ON Semiconductor MOSFET, N, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: MOSFET, N, SOT-23

Download Data Sheet

Simulation Model

Specifications:

• Continuous Drain Current Id: 170 mA
• Current Id Max: 170 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 6 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 225 mW
• Pulse Current Idm: 680 mA
• Rds(on) Test Voltage Vgs: 10 V DC
• SMD Marking: SA
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: 2.8 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V DC
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.8 V

RoHS: Yes

Accessories:

• LICEFA - V11-7
• Roth Elektronik - RE901