Datasheet SI2302DS,215 - NXP MOSFET, N CH, 20 V, 2.5 A, SOT23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH, 20 V, 2.5 A, SOT23

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Docket:
SI2302DS
N-channel enhancement mode field-effect transistor
Rev.

02 -- 20 November 2001
M3D088
Product data

Specifications:

• Continuous Drain Current Id: 3.6 A
• Current Id Max: 2.5 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 85 MOhm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 830 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 650 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 650 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Andere Namen:

SI2302DS215, SI2302DS 215