Datasheet BUK9Y11-30B - NXP MOSFET, N CH 30 V 75 A SOT669 — Datenblatt

NXP BUK9Y11-30B

Part Number: BUK9Y11-30B

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH 30 V 75 A SOT669

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Docket:
BUK9Y11-30B
N-channel TrenchMOS logic level FET
Rev.

01 -- 30 August 2007 Product data sheet
1. Product profile
1.1 General description

Specifications:

  • Continuous Drain Current Id: 59 A
  • Current Id Max: 59 A
  • Drain Source Voltage Vds: 30 V
  • Mounting Type: SMD
  • Number of Pins: 4
  • On Resistance Rds(on): 9 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • Package / Case: SOT-669
  • Power Dissipation: 75 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: SOT-669
  • Transistor Polarity: N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 15 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Y-Ex

Andere Namen:

BUK9Y1130B, BUK9Y11 30B