Datasheet BSS192,115 - NXP MOSFET P-CH 240 V 0.2 A SOT89 — Datenblatt

NXP BSS192,115

Part Number: BSS192,115

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET P-CH 240 V 0.2 A SOT89

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSS192 P-channel enhancement mode vertical D-MOS transistor

Specifications:

  • Continuous Drain Current Id: -200 mA
  • Current Id Max: -200 mA
  • Drain Source Voltage Vds: -240 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 12 Ohm
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-89
  • Power Dissipation: 1 W
  • Rds(on) Test Voltage Vgs: -10 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: -2.8 V
  • Transistor Case Style: SOT-89
  • Transistor Polarity: P Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: -240 V
  • Voltage Vgs Max: -2.8 V
  • Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Andere Namen:

BSS192115, BSS192 115