Datasheet BSH103 - NXP MOSFET, N, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N, SOT-23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH103 N-channel enhancement mode MOS transistor

Simulation Model

Specifications:

• Continuous Drain Current Id: 850 mA
• Current Id Max: 920 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 500 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 500 mW
• Power Dissipation Ptot Max: 500 mW
• Pulse Current Idm: 3.4 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 400 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 8 V
• Voltage Vgs Rds on Measurement: 2.5 V

RoHS: Yes