Datasheet IXUC120N10 - IXYS MOSFET, N, ISOPLUS220 — Datenblatt

IXYS IXUC120N10

Part Number: IXUC120N10

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET IXUC 120N10
ISOPLUS220TM
Electrically Isolated Back Surface
VDSS = 100 V ID25 = 120 A RDS(on) = 9.5 m

Specifications:

  • Continuous Drain Current Id: 120 A
  • Drain Source Voltage Vds: 100 V
  • Isolation Voltage: 2.5 kV
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 36nC
  • On State Resistance: 9.5 MOhm
  • Package / Case: ISOPLUS-220
  • Power Dissipation Pd: 300 W
  • Reverse Recovery Time trr Max: 80 ns
  • Rth: 0.5
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: ISOPLUS-220
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes