Datasheet IXUC100N055 - IXYS MOSFET, N, ISOPLUS220 — Datenblatt

IXYS IXUC100N055

Part Number: IXUC100N055

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

data sheetDownload Data Sheet

Docket:
ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
IXUC100N055

Specifications:

  • Continuous Drain Current Id: 100 A
  • Drain Source Voltage Vds: 55 V
  • Isolation Voltage: 2.5 kV
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 22nC
  • On State Resistance: 7.7 MOhm
  • Package / Case: ISOPLUS-220
  • Power Dissipation Pd: 150 W
  • Reverse Recovery Time trr Max: 80 ns
  • Rth: 1
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: ISOPLUS-220
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 55 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes