Datasheet IXFV18N60PS - IXYS MOSFET, N, SMD, PLUS220 — Datenblatt

IXYS IXFV18N60PS

Part Number: IXFV18N60PS

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, SMD, PLUS220

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 18N60P IXFV 18N60P IXFV 18N60PS
VDSS
ID25

Specifications:

  • Capacitance Ciss Typ: 2500 pF
  • Continuous Drain Current Id: 18 A
  • Drain Source Voltage Vds: 600 V
  • Junction to Case Thermal Resistance A: 0.35°C/W
  • Mounting Type: SMD
  • N-channel Gate Charge: 50nC
  • Number of Pins: 3
  • On State Resistance: 400 MOhm
  • Package / Case: PLUS220
  • Power Dissipation Pd: 360 W
  • Reverse Recovery Time trr Max: 200 ns
  • Threshold Voltage Vgs Typ: 5.5 V
  • Transistor Case Style: PLUS220
  • Transistor Polarity: N Channel
  • Transistor Type: High Performance (HiPerFET)
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes