Datasheet IXFV110N10PS - IXYS MOSFET, N, SMD, PLUS220 — Datenblatt

IXYS IXFV110N10PS

Part Number: IXFV110N10PS

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, SMD, PLUS220

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Docket:
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
IXFH 110N10P IXFV 110N10P IXFV 110N10PS
VDSS = 100 V ID25 = 110 A RDS(on) 15 m trr 150 ns
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight

Specifications:

  • Capacitance Ciss Typ: 3550 pF
  • Continuous Drain Current Id: 110 A
  • Drain Source Voltage Vds: 100 V
  • Junction to Case Thermal Resistance A: 0.31°C/W
  • Mounting Type: SMD
  • N-channel Gate Charge: 110nC
  • Number of Pins: 3
  • On State Resistance: 15 MOhm
  • Package / Case: PLUS220
  • Power Dissipation Pd: 480 W
  • Reverse Recovery Time trr Max: 150 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: PLUS220
  • Transistor Polarity: N Channel
  • Transistor Type: High Performance (HiPerFET)
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes