Datasheet IXFK170N10P - IXYS MOSFET, N, TO-264 — Datenblatt

IXYS IXFK170N10P

Part Number: IXFK170N10P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-264

Specifications:

  • Capacitance Ciss Typ: 6000 pF
  • Continuous Drain Current Id: 170 A
  • Drain Source Voltage Vds: 100 V
  • Junction to Case Thermal Resistance A: 0.21°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 198nC
  • Number of Pins: 3
  • On State Resistance: 9 MOhm
  • Package / Case: TO-264
  • Power Dissipation Pd: 714 W
  • Reverse Recovery Time trr Max: 150 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-264
  • Transistor Polarity: N Channel
  • Transistor Type: High Performance (HiPerFET)
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes