Datasheet IXFC96N15P - IXYS MOSFET, N, ISOPLUS220 — Datenblatt

IXYS IXFC96N15P

Part Number: IXFC96N15P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 96N15P
VDSS = 150 V ID25 = 42 A RDS(on) = 26 m < 200 ns trr
N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated

Specifications:

  • Capacitance Ciss Typ: 3500 pF
  • Continuous Drain Current Id: 42 A
  • Drain Source Voltage Vds: 150 V
  • Isolation Voltage: 2.5 kV
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 110nC
  • On State Resistance: 26 MOhm
  • Package / Case: ISOPLUS-220
  • Power Dissipation Pd: 120 W
  • Reverse Recovery Time trr Max: 200 ns
  • Rth: 1.25
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: ISOPLUS-220
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 150 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes