Datasheet IXFC110N10P - IXYS MOSFET, N, ISOPLUS220 — Datenblatt

IXYS IXFC110N10P

Part Number: IXFC110N10P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

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Docket:
PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 110N10P
VDSS = 100 V ID25 = 60 A RDS(on) 17 m trr 150 ns
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated

Specifications:

  • Capacitance Ciss Typ: 3550 pF
  • Continuous Drain Current Id: 60 A
  • Drain Source Voltage Vds: 100 V
  • Isolation Voltage: 2.5 kV
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 110nC
  • On State Resistance: 17 MOhm
  • Package / Case: ISOPLUS-220
  • Power Dissipation Pd: 120 W
  • Reverse Recovery Time trr Max: 150 ns
  • Rth: 1.25
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: ISOPLUS-220
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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