Datasheet NTE2395 - NTE Electronics MOSFET, N — Datenblatt

NTE Electronics NTE2395

Part Number: NTE2395

Detaillierte Beschreibung

Manufacturer: NTE Electronics

Description: MOSFET, N

data sheetDownload Data Sheet

Docket:
NTE2395 MOSFET N­Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C (Note 1) .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Gate­to­Source Voltage, VGS . . . . . . . . . . . . . .

Specifications:

  • Continuous Drain Current Id: 50 A
  • Current Id Max: 50 A
  • Drain Source Voltage Vds: 60 V
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • On State Resistance: 28 MOhm
  • Package / Case: TO-220
  • Power Dissipation Pd: 150 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Transistor Case Style: TO-220
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 60 V
  • Voltage Vgs Max: 4 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes