Datasheet IXTK102N30P - IXYS MOSFET, N, TO-264 — Datenblatt

IXYS IXTK102N30P

Part Number: IXTK102N30P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-264

data sheetDownload Data Sheet

Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 102N30P
VDSS = 300 V ID25 = 102 A RDS(on) 33 m
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight

Specifications:

  • Capacitance Ciss Typ: 7500 pF
  • Continuous Drain Current Id: 102 A
  • Current Id Max: 102 A
  • Drain Source Voltage Vds: 300 V
  • Junction to Case Thermal Resistance A: 0.18°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 224nC
  • Number of Pins: 3
  • On State Resistance: 33 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-264
  • Power Dissipation Pd: 700 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 250 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-264
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 300 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A