Datasheet IXFT36N50P - IXYS MOSFET, N, TO-268 — Datenblatt

IXYS IXFT36N50P

Part Number: IXFT36N50P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-268

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS
VDSS ID25 trr
RDS(on)

Specifications:

  • Capacitance Ciss Typ: 5500 pF
  • Continuous Drain Current Id: 36 A
  • Current Id Max: 36 A
  • Drain Source Voltage Vds: 500 V
  • Junction to Case Thermal Resistance A: 0.23°C/W
  • Mounting Type: SMD
  • N-channel Gate Charge: 93nC
  • Number of Pins: 3
  • On State Resistance: 170 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-268
  • Power Dissipation Pd: 540 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 200 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-268
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 500 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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