Datasheet IXFR200N10P - IXYS MOSFET, N, ISOPLUS247 — Datenblatt

IXYS IXFR200N10P

Part Number: IXFR200N10P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS247

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Docket:
PolarTM HiPerFET Power MOSFET
Electrically Isolated Tab
IXFR 200N10P
VDSS = 100 V ID25 = 133 A RDS(on) 9 m tRR 150 ns
N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated

Specifications:

  • Capacitance Ciss Typ: 7600 pF
  • Continuous Drain Current Id: 133 A
  • Current Id Max: 133 A
  • Drain Source Voltage Vds: 100 V
  • Isolation Voltage: 2.5 kV
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 235nC
  • Number of Pins: 3
  • On State Resistance: 9 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • Package / Case: ISOPLUS-247
  • Power Dissipation Pd: 300 W
  • Rds(on) Test Voltage Vgs: 15 V
  • Reverse Recovery Time trr Max: 150 ns
  • Rth: 0.5
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: ISOPLUS-247
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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