Datasheet IXFN32N120 - IXYS MOSFET, N, SOT-227B — Datenblatt

IXYS IXFN32N120

Part Number: IXFN32N120

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
Advanced Technical Data
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 32N120
VDSS ID25

Specifications:

  • Avalanche Single Pulse Energy Eas: 4J
  • Continuous Drain Current Id: 32 A
  • Current Id Max: 32 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 1.2 kV
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Screw
  • N-channel Gate Charge: 400nC
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 350 MOhm
  • On State Resistance: 350 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: ISOTOP
  • Power Dissipation Pd: 780 W
  • Pulse Current Idm: 128 A
  • Rate of Voltage Change dv / dt: 15V/ns
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 64mJ
  • Reverse Recovery Time trr Typ: 300 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: ISOTOP
  • Transistor Polarity: N Channel
  • Transistor Type: MOSFET
  • Voltage Vds Typ: 1.2 kV
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 5 V
  • Weight: 0.000036kg

RoHS: Yes

Accessories:

  • Panasonic - EYGA121807A
  • SCHRODER - 20900