Datasheet IXFN26N90 - IXYS MOSFET, N, SOT-227B — Datenblatt

IXYS IXFN26N90

Part Number: IXFN26N90

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET
IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
G D
VDSS 900 V 900 V
ID (cont) 26 A 25 A

Specifications:

  • Avalanche Single Pulse Energy Eas: 3J
  • Continuous Drain Current Id: 26 A
  • Current Id Max: 26 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 900 V
  • Full Power Rating Temperature: 25°C
  • Isolation Voltage: 2.5 kV
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Screw
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 300 MOhm
  • On State Resistance: 300 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: ISOTOP
  • Power Dissipation Pd: 600 W
  • Pulse Current Idm: 104 A
  • Rate of Voltage Change dv / dt: 5 V/µs
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 64mJ
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: ISOTOP
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 900 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 5 V
  • Weight: 0.044kg

RoHS: Yes

Accessories:

  • Panasonic - EYGA121807A
  • SCHRODER - 20900