Datasheet IXFN230N10 - IXYS MOSFET, N, SOT-227B — Datenblatt

IXYS IXFN230N10

Part Number: IXFN230N10

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
Advanced Technical Information
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 230N10
VDSS ID25

Specifications:

  • Continuous Drain Current Id: 230 A
  • Current Id Max: 230 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 100 V
  • Full Power Rating Temperature: 25°C
  • Mounting Type: Screw
  • Number of Pins: 4
  • On State Resistance Max: 6 MOhm
  • On State Resistance: 6 MOhm
  • Package / Case: ISOTOP
  • Power Dissipation Pd: 700 W
  • Pulse Current Idm: 920 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: ISOTOP
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 100 V
  • Voltage Vds: 100 V
  • Voltage Vgs Max: 4 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA121807A
  • SCHRODER - 20900