Datasheet IXFN200N10P - IXYS MOSFET, N, SOT-227B — Datenblatt

IXYS IXFN200N10P

Part Number: IXFN200N10P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

Docket:
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, IISOL 1 mA, Test Conditions
IXFN 200N10P
VDSS = 100 V ID25 = 200 A RDS(on) 7.5 m trr 150 ns

Specifications:

Capacitance Ciss Typ: 7600 pF
Continuous Drain Current Id: 200 A
Current Id Max: 200 A
Drain Source Voltage Vds: 100 V
Junction to Case Thermal Resistance A: 0.22°C/W
Mounting Type: Screw
N-channel Gate Charge: 235nC
Number of Pins: 4
On State Resistance: 7.5 MOhm
Operating Temperature Range: -55°C to +175°C
Package / Case: ISOTOP
Power Dissipation Pd: 680 W
Rds(on) Test Voltage Vgs: 15 V
Reverse Recovery Time trr Max: 150 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: ISOTOP
Transistor Polarity: N Channel
Voltage Vds Typ: 100 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

Panasonic - EYGA121807A
SCHRODER - 20900