Datasheet IXFN200N07 - IXYS MOSFET, N, SOT-227B — Datenblatt
Part Number: IXFN200N07
Detaillierte Beschreibung
Manufacturer: IXYS
Description: MOSFET, N, SOT-227B
Docket:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFN 200 N06 IXFN 200 N07 60 V 70 V
ID25 200 A 200 A
RDS(on) 6 6 m m
Specifications:
- Avalanche Single Pulse Energy Eas: 2J
- Continuous Drain Current Id: 200 A
- Current Id Max: 200 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 70 V
- Full Power Rating Temperature: 25°C
- Isolation Voltage: 2.5 kV
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: Screw
- Number of Pins: 3
- Number of Transistors: 1
- On State Resistance Max: 6 MOhm
- On State Resistance: 6 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: ISOTOP
- Power Dissipation Pd: 520 W
- Pulse Current Idm: 600 A
- Rds(on) Test Voltage Vgs: 10 V
- Repetitive Avalanche Energy Max: 30mJ
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: ISOTOP
- Transistor Polarity: N Channel
- Voltage Vds Typ: 70 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 4 V
- Weight: 0.044kg
RoHS: Yes
Accessories:
- Panasonic - EYGA121807A
- SCHRODER - 20900