Datasheet IXFN200N07 - IXYS MOSFET, N, SOT-227B — Datenblatt

IXYS IXFN200N07

Part Number: IXFN200N07

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFN 200 N06 IXFN 200 N07 60 V 70 V
ID25 200 A 200 A
RDS(on) 6 6 m m

Specifications:

  • Avalanche Single Pulse Energy Eas: 2J
  • Continuous Drain Current Id: 200 A
  • Current Id Max: 200 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 70 V
  • Full Power Rating Temperature: 25°C
  • Isolation Voltage: 2.5 kV
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Screw
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 6 MOhm
  • On State Resistance: 6 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: ISOTOP
  • Power Dissipation Pd: 520 W
  • Pulse Current Idm: 600 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 30mJ
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: ISOTOP
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 70 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4 V
  • Weight: 0.044kg

RoHS: Yes

Accessories:

  • Panasonic - EYGA121807A
  • SCHRODER - 20900