Datasheet IXFN180N15P - IXYS MOSFET, N, SOT-227B — Datenblatt

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Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
PolarHTTM HiPerFET IXFN 180N15P Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS ID25
RDS(on) trr
= 150 V = 150 A 11 m 200 ns

Specifications:

• Capacitance Ciss Typ: 7000 pF
• Continuous Drain Current Id: 180 A
• Current Id Max: 150 A
• Drain Source Voltage Vds: 150 V
• Junction to Case Thermal Resistance A: 0.22°C/W
• Mounting Type: Screw
• N-channel Gate Charge: 240nC
• Number of Pins: 4
• On State Resistance: 11 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 680 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 150 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900