Datasheet IXFH30N50 - IXYS MOSFET, N, TO-247 — Datenblatt

IXYS IXFH30N50

Part Number: IXFH30N50

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V
ID25 30 A 32 A
RDS(on) 0.16 W 0.15 W

Specifications:

  • Avalanche Single Pulse Energy Eas: 1.5J
  • Continuous Drain Current Id: 30 A
  • Current Id Max: 30 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 500 V
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 227nC
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 160 MOhm
  • On State Resistance: 160 MOhm
  • Package / Case: TO-247
  • Power Dissipation Pd: 360 W
  • Pulse Current Idm: 120 A
  • Rate of Voltage Change dv / dt: 5V/ns
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 45mJ
  • Reverse Recovery Time trr Typ: 250 ns
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Transistor Type: MOSFET
  • Voltage Vds Typ: 500 V
  • Voltage Vgs Max: 4 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4 V
  • Weight: 6 g

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 243 MI 247 H
  • Fischer Elektronik - FK 243 MI 247 O
  • Fischer Elektronik - SK 145/25 STS-220
  • Fischer Elektronik - WLK 5