Datasheet IXFH24N80P - IXYS MOSFET, N, TO-247 — Datenblatt

IXYS IXFH24N80P

Part Number: IXFH24N80P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-247

data sheetDownload Data Sheet

Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 24N80P IXFK 24N80P IXFT 24N80P
VDSS = 800 V ID25 = 24 A RDS(on) 400 m trr 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight

Specifications:

  • Capacitance Ciss Typ: 5800 pF
  • Continuous Drain Current Id: 24 A
  • Current Id Max: 24 A
  • Drain Source Voltage Vds: 800 V
  • Junction to Case Thermal Resistance A: 0.19°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 100nC
  • Number of Pins: 3
  • On State Resistance: 400 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-247
  • Power Dissipation Pd: 650 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 250 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 800 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Dow Corning - 2265931
  • Fischer Elektronik - FK 243 MI 247 O
  • Fischer Elektronik - WLK 5