Datasheet IXFH12N100Q - IXYS MOSFET, N, TO-247 — Datenblatt

IXYS IXFH12N100Q

Part Number: IXFH12N100Q

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
HiPerFETTM Power MOSFETs Q Class
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt
VDSS IXFH/IXFT12N100Q IXFH/IXFT10N100Q
ID25
RDS(on)

Specifications:

  • Continuous Drain Current Id: 12 A
  • Current Id Max: 12 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 1 kV
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 90nC
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 1.05 Ohm
  • On State Resistance: 1.05 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-247
  • Power Dissipation Pd: 300 W
  • Pulse Current Idm: 48 A
  • Rate of Voltage Change dv / dt: 5V/ns
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 30mJ
  • Threshold Voltage Vgs Typ: 5.5 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Transistor Type: MOSFET
  • Voltage Vds Typ: 1 kV
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 5.5 V
  • Weight: 6 g

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 243 MI 247 H
  • Fischer Elektronik - FK 243 MI 247 O
  • Fischer Elektronik - SK 145/25 STS-220
  • Fischer Elektronik - WLK 5