Datasheet IXFH120N15P - IXYS MOSFET, N, TO-247 — Datenblatt

IXYS IXFH120N15P

Part Number: IXFH120N15P

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode
Symbol VDSS VDGR VDSS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 M Continuous Transient TC = 25° C External lead current limit
IXFH 120N15P IXFT 120N15P
VDSS ID25

Specifications:

  • Capacitance Ciss Typ: 4900 pF
  • Continuous Drain Current Id: 120 A
  • Current Id Max: 120 A
  • Drain Source Voltage Vds: 150 V
  • Junction to Case Thermal Resistance A: 0.25°C/W
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 150nC
  • Number of Pins: 3
  • On State Resistance: 16 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • Package / Case: TO-247
  • Power Dissipation Pd: 600 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 200 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 150 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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