Datasheet IRLMS1503 - International Rectifier MOSFET, N LOGIC MICRO-6 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N LOGIC MICRO-6

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Docket:
PD - 9.1508C
IRLMS1503
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low Rds(on) N-Channel MOSFET

Simulation Model

Specifications:

• Capacitance Ciss Typ: 210 pF
• Charge Qrr @ Tj = 25В°C Typ: 39nC
• Continuous Drain Current Id: 3.2 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 3.00 mm
• External Length / Height: 1.45 mm
• External Width: 3.00 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 6.4nC
• Number of Pins: 6
• Number of Transistors: 1
• On Resistance Rds(on): 100 MOhm
• Package / Case: Micro6
• Power Dissipation Pd: 1.7 W
• Pulse Current Idm: 18 A
• Rate of Voltage Change dv / dt: 5V/ns
• Reverse Recovery Time trr Typ: 36 ns
• SMD Marking: 2B
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: MicroSOIC
• Transistor Polarity: N Channel
• Voltage Vds: 30 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V