Datasheet IRF6635TR1 - International Rectifier MOSFET, N, DIRECTFET, MX — Datenblatt

International Rectifier IRF6635TR1

Part Number: IRF6635TR1

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MX

Docket:
PD - 96981F
IRF6635
DirectFET Power MOSFET
l l l l l l l l l
RoHs compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.3m@ 10V 1.8m@ 4.5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 47nC 17nC 4.7nC 48nC 29nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for SyncFET socket of Sync.

Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques MX

Simulation Model

Specifications:

Capacitance Ciss Typ: 5970 pF
Continuous Drain Current Id: 25 A
Current Id Max: 32 A
Drain Source Voltage Vds: 30 V
Junction Temperature Tj Max: 150°C
Junction Temperature Tj Min: -40°C
Mounting Type: SMD
On Resistance Rds(on): 1.3 MOhm
Operating Temperature Range: -40°C to +150°C
Package / Case: MX
Power Dissipation Pd: 2.8 W
Pulse Current Idm: 250 A
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Typ: 20 ns
SMD Marking: 6635
SVHC: No SVHC (15-Dec-2010)
Threshold Voltage Vgs Typ: 1.8 V
Transistor Case Style: MX
Transistor Polarity: N Channel
Voltage Vds Typ: 30 V
Voltage Vds: 30 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

LICEFA - V11-7-6-10
LICEFA - V11-7