Datasheet IRF6621TR1 - International Rectifier MOSFET, N, DIRECTFET, SQ — Datenblatt
Part Number: IRF6621TR1
Detaillierte Beschreibung
Manufacturer: International Rectifier
Description: MOSFET, N, DIRECTFET, SQ
Docket:
PD - 97005A
IRF6621
DirectFET Power MOSFET
l l l l l l l l l
RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
Specifications:
- Capacitance Ciss Typ: 1460 pF
- Continuous Drain Current Id: 12 A
- Drain Source Voltage Vds: 30 V
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -40°C
- Mounting Type: SMD
- On Resistance Rds(on): 7 MOhm
- Package / Case: SQ
- Power Dissipation Pd: 2.2 W
- Pulse Current Idm: 96 A
- Reverse Recovery Time trr Typ: 9.8 ns
- SMD Marking: 6621
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 1.8 V
- Transistor Case Style: SQ
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vds: 30 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- LICEFA - V11-7-6-10
- LICEFA - V11-7