Datasheet IRLHM630TRPBF - International Rectifier MOSFET, N CH, DIODE, 30 V, 21 A, PQFN33 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, N CH, DIODE, 30 V, 21 A, PQFN33

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Docket:
PD - 97567A
IRLHM630PbF
HEXFET® Power MOSFET
VDS VGS max RDS(on) max
(@VGS = 4.5V)

Specifications:

• Continuous Drain Current Id: 21 A
• Current Id Max: 21 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 2800µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 2.7 W
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 800 mV
• Transistor Case Style: QFN
• Transistor Polarity: N Channel
• Voltage Vgs Max: 12 V

RoHS: Yes