Datasheet IRF6729MTR1PBF - International Rectifier MOSFET, N CH, 30 V, 31 A, DIRECTFET MX — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N CH, 30 V, 31 A, DIRECTFET MX

Download Data Sheet

Docket:
PD - 96229
HEXFET® Power MOSFET plus Schottky Diode
RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4m@ 10V 2.2m@ 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ultra Low Package Inductance 42nC 14nC 4.9nC 40nC 29nC 1.8V l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync.

FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested DirectFET ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
l
IRF6729MPbF IRF6729MTRPbF

Specifications:

• Continuous Drain Current Id: 190 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 7
• On Resistance Rds(on): 0.0014 Ohm
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation: 104 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• International Rectifier - AUIRS2004S
• International Rectifier - AUIRS2117S