Datasheet IRF6631TR1PBF - International Rectifier MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET

Simulation Model

Specifications:

• Continuous Drain Current, Id: 10 A
• Drain Source Voltage, Vds: 30 V
• On Resistance, Rds(on): 0.0078 Ohm
• Power Dissipation, Pd: 42 W
• Rds(on) Test Voltage, Vgs: 10 V
• Threshold Voltage, Vgs Typ: 1.8 V
• Transistor Polarity: N Channel

RoHS: Yes